激光与光电子学进展, 2017, 54 (12): 121603, 网络出版: 2017-12-11  

本征非晶硅薄膜钝化晶体表面特性的DLTS分析 下载: 626次

DLTS Analysis of Characteristics of Crystal Surface Passivated by Intrinsic Amorphous Silicon
作者单位
1 南昌大学光伏研究院, 江西 南昌 330031
2 南昌大学理学院, 江西 南昌 330031
3 东南大学毫米波国家重点实验室, 江苏 南京 210096
摘要
以SiH4和H2作为气源, 采用热丝化学气相沉积法制备a-Si∶H薄膜钝化c-Si表面, 采用准稳态光电导法和I-V法分析了工艺参数对钝化效果的影响, 采用C-V法和深能级瞬态谱法对钝化后硅片表面的缺陷态进行测试。实验结果表明, 在频率为200 kHz时, 表面复合速率为54 cm/s的硅片的表面缺陷态密度为1.02×1011 eV-1·cm-2, 固定电荷密度为6.12×1011 cm-2; 本征a-Si∶H对硅片表面的钝化效果是由该薄膜在硅片表面引入的氢对应的键终止以及由其引入的固定电荷形成的场钝化效应共同决定的; 本征a-Si∶H钝化后硅片表面的深能级缺陷特征是电子陷阱, 激活能、俘获截面以及缺陷浓度分别为-0.235 eV、1.8×10-18 cm2、4.07×1013 cm-3。
Abstract
Using SiH4 and H2 as sources, we use hot-wire chemical vapor deposition to prepare intrinsic amorphous silicon (a-Si∶H) on c-Si wafers surface. Quasi-steady state photo conduction method and I-V method are used to analyze the influence of process parameters on the passivation effect. C-V method and deep level transient spectroscopy (DLTS) method are employed to test the defect state of the passivated silicon wafer surface. The experimental results show that, under the condition of 200 kHz, the surface defect density of the c-Si wafer with surface recombination velocity of 54 cm/s is 1.02×1011 eV-1·cm-2 and the fixed charge density is 6.12×1011 cm-2. The passivation effect of a-Si∶H on the surface of the silicon wafer is determined by the dangling bond on the surface of the thin film silicon saturated by hydrogen bond and the surface fixed charges forming the field passivation effect. The a-Si∶H passivated deep-level defect on the surface of the wafer is characterized as electron trap. The active energy, capture cross section and defect concentration is 0.235 eV, 1.8×10-18 cm2, and 4.07×1013 cm-3, respectively.

龚敏刚, 黄海宾, 田罡煜, 高超, 孙喜莲, 邓新华, 袁吉仁, 周浪. 本征非晶硅薄膜钝化晶体表面特性的DLTS分析[J]. 激光与光电子学进展, 2017, 54(12): 121603. Gong Mingang, Huang Haibin, Tian Gangyu, Gao Chao, Sun Xilian, Deng Xinhua, Yuan Jiren, Zhou Lang. DLTS Analysis of Characteristics of Crystal Surface Passivated by Intrinsic Amorphous Silicon[J]. Laser & Optoelectronics Progress, 2017, 54(12): 121603.

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