利用无掩模反应离子刻蚀法制备黑硅, 研究了黑硅微结构密度和高度对其光学特性的影响。采用场发射扫描电子显微镜和带积分球的紫外-可见-近红外分光光度计分别表征黑硅微结构形貌和光学特性。研究结果表明, 黑硅微结构密度增大和高度增加, 则黑硅吸收率增大, 高度较大的微结构更加有利于增强黑硅近红外光吸收。无掩模反应离子刻蚀法制备的黑硅的吸收率在高温退火过程中保持稳定。

The black silicon was prepared by non-mask reactive ion etching. The effects of microstructure density and height on the optical properties of black silicon were studied by means of scan-electron microscopy and UV-VIS-NIR spectrophotometer. The results show that, the higher the height and the greater the microstructure density of the microstructure of black silicon, the greater the absorptance. The higher height of microstructure is more beneficial for the absorption of near infrared light. The absorptance of black silicon prepared by non-mask reactive ion etching remains stable under high temperature annealing from the visible (400 nm) to near infrared (1 700 nm) wavelength region.