Chinese Optics Letters, 2018, 16 (1): 011404, Published Online: Jul. 17, 2018   

Stress damage process of silicon wafer under millisecond laser irradiation Download: 751次

Author Affiliations
1 School of Science, Nanjing University of Science & Technology, Nanjing 210094, China
2 Institute of Mechanical and Electrical Engineering, Zhoukou Normal University, Zhoukou 466000, China
Abstract
The stress damage process of a single crystal silicon wafer under millisecond laser irradiation is studied by experiments and numerical simulations. The formation process of low-quality surface is monitored in real-time. Stress damage can be observed both in laser-on and -off periods. Plastic deformation is responsible for the first stress damage in the laser-on period. The second stress damage in the laser-off period is a combination of plastic deformation and fracture, where the fundamental cause lies in the residual molten silicon in the ablation hole.

Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 2018, 16(1): 011404.

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