介绍了一种InP衬底上的平面In0.53Ga0.47As耿氏二极管的设计、制作和测试方法。为了提高器件的输出功率, 使用Advanced Design System 2011仿真软件设计了50 Ω共面波导馈电结构作为器件电极, 减少测试功率损耗; 同时在版图设计时加大了金属电极面积, 改善器件的散热效果。测试结果表明, 当所加电压为4.4 V时, 沟道长度和宽度分别为2 μm和120 μm器件的基波振荡频率为168.3 GHz, 输出功率为-5.21 dBm。这种高功率平面结构耿氏二极管在太赫兹频段具有巨大的应用潜力。

Fabrication and measurement of the In0.53Ga0.47As based planar Gunn diodes on the InP semi-insulating substrate is presented. In order to increase the RF output power of the planar Gunn devices, the planar Gunn diode is designed in 50 Ω Co-Planar Wave(CPW) guide format, which is designed using the Advanced Design System(ADS-2011). Meanwhile, increasing the area of the metal pads can improve the heat dissipation. For a 120 ?倕 m wide device with a 2 ?倕 m channel length, experimental results show a fundamental oscillation frequency of 168.3 GHz with a RF output power of -5.21 dBm. These planar Gunn devices show great potential as solid-state THz signal sources.