太赫兹科学与电子信息学报, 2017, 15 (5): 855, 网络出版: 2018-01-25  

子阱及非对称势垒对GaN RTD电学特性的影响

Influence of sub-quantum-well and asymmetric quantum-barrier structures on the electrical characteristics of GaN RTD
作者单位
1 中国工程物理研究院 微系统与太赫兹研究中心, 四川 成都 610299
2 四川大学 物理科学与技术学院, 四川 成都 610065
摘要
利用Silvaco软件对Al0.2Ga0.8N/GaN共振隧穿二极管(RTD)进行仿真, 重点研究了InGaN子量子阱结构及相应非对称势垒结构设计对其电流特性的影响。对比分析了子量子阱结构中InGaN的In组分和子阱厚度对RTD微分负阻(NDR)特性的影响, 得出了提升器件性能的最佳参数范围。为了克服Al0.2Ga0.8N/GaN RTD势垒低对器件电流峰谷比(PVCR)的影响, 在子量子阱结构的基础上引入了非对称势垒结构设计, 通过改变收集区侧势垒的高度和厚度, 将AlGaN/GaN的Ip和PVCR由基本结构的0.42 A和1.25, 提高到了0.583 A和5.01, 实现了器件性能的优化, 并为今后的器件研制提供了设计思路。
Abstract
The influence of InGaN sub-quantum-well and asymmetric quantum-barrier structures on Al0.2Ga0.8N/GaN Resonant Tunneling Diodes(RTD) are studied based on Silvaco simulator. Theoretical investigation reveals that there are appropriate ranges of the In composition and thickness for InGaN sub-quantum-well which can obviously improve the Negative Differential Resistance(NDR) characteristics of RTD. It is also found that by introducing asymmetric quantum-barrier structures in the sub-quantum-well GaN RTD, the I-U characteristic of Peak-to-Valley Current Ratio(PVCR) can be further improved. Numerical simulation shows that RTD with both InGaN sub-quantum-well and asymmetric quantum-barrier structures exhibits the peak current (Ip) and PVCR of 0.583 A and 5.01 respectively, superior to that of the conventional Al0.2Ga0.8N/GaN RTD without sub-quantum-well having Ip of 0.42 A and PVCR of 1.25. The introducing of improved new quantum structures for the low Al composition AlGaN/GaN RTD has provided one of the solutions to solve the contradiction between the device electrical properties and its actual manufacture for the future terahertz applications.究院—四川大学协同创新联合基金资助项目(CX2014005)

苏娟, 谭为, 高博. 子阱及非对称势垒对GaN RTD电学特性的影响[J]. 太赫兹科学与电子信息学报, 2017, 15(5): 855. SU Juan, TAN Wei, GAO Bo. Influence of sub-quantum-well and asymmetric quantum-barrier structures on the electrical characteristics of GaN RTD[J]. Journal of terahertz science and electronic information technology, 2017, 15(5): 855.

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