对AlGaInAs多量子阱FP TO-56半导体激光器在不同环境温度、相同发热量下测量出光波长的变化来分析器件波长温度变化系数; 并对器件在室温、不同发热功率下的出光波长变化进行测量, 分析计算得到器件热阻为183K/W.接着对器件进行不同高温应力试验, 结果显示：环境温度从120℃增加至220℃时, 器件峰值波长发生缓慢蓝移; 当环境温度达到225℃时, 器件波长发生明显蓝移, 从试验前1 297 nm蓝移至1 265 nm; 温度继续增加至235℃, 波长蓝移至1 258 nm, 同时光谱模式间隔从试验前0.92 nm降低至0.84nm, 即模式有效折射率从3.66增加至3.77; 温度继续增加至240℃, 器件失效无光.其主要原因可能为：高温应力下, 激光器外延材料中波导层、量子阱量子垒中的Al、Ga、In金属元素往有源区方向迁移使得量子阱有效禁带宽度以及有源区波导折射率增大.该试验结果为进一步分析器件高温下器件的失效机理以及改善器件高温性能提供试验基础.

The wavelength/temperature coefficient of AlGaInAs MQWs FP laser devices are measured by analyzing the wavelength changed with ambient temperature at the same heating power. Also, the wavelength of device changed with heating power under RT are measured, and the thermal resistance of device is calculated to be 183K/W. Then, the temperature stress storage experiment are carried out on the device, the results showed: a slowly increased of wavelength happened as the ambient temperature increased from 120℃ to 220℃; and, a obviously blue shifted of wavelength happened while the temperature arrived at 225℃, the wavelength of device shifted to 1 265 nm from 1 297 nm before experiment; as the temperature reached to 235℃, the wavelength of device shifted to 1 258 nm, and the mode spacing decreased from 0.92 nm before experiment to 0.84 nm, that the effective refractive index of optical mode increased from 3.66 to 3.77; finally, the device became failure as the temperature arrived at 240℃. The possible reasons were mainly due to the Al, Ga and In atoms in the waveguide, quantum well and barrier layers of epi-wafer migration and the composition of these layers changing under the high temperature stress. The results will more provide the foundation for failure mechanism analysis and performances improvement of device under high temperature.