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Sb掺杂Si3N4基Si量子点薄膜的制备与结构

Preparation and Structural Properties of Sb-doped Si3N4-based Si Quantum Dot Thin Films

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摘要

基于多靶射频磁控溅射技术, 结合快速光热退火后处理制备了Sb掺杂Si3N4基Si量子点(Si-QDs)薄膜。采用透射电镜、掠入射X射线衍射、拉曼光谱和光致发光光谱等手段对薄膜的微结构和发光特性进行了研究, 分析了Sb掺杂对Si-QDs薄膜的微结构和发光特性的影响规律.结果表明, Sb掺杂表现出明显的诱导晶化作用.掺杂的Sb有助于Si原子在Si3N4基质中的扩散并形成Si-QDs.随着Sb掺杂量的增加, Si-QDs的尺寸逐渐增大, 薄膜的结晶率Xc有效提高, 其PL谱峰随之增强, 谱峰的半高峰宽逐渐变窄; 由于Si-QDs尺寸的增加还导致PL发光谱峰位产生红移.

Abstract

The thin films of Sb-doped Silicon Quantum Dots (Si-QDs) embedded in Si3N4 matrix were prepared by using muti-target radio frequency magnetron sputtering deposition technique combined with a rapid thermal process. The microstructure and luminescence properties of the films were studied by transmission electron microscopy, grazing incidence X-ray diffraction, Raman spectroscopy and photoluminescence spectroscopy. The effect of Sb doping on the microstructure and luminescent properties of Si-QDs films was discussed. The results show that the Sb-doping films exhibit obvious Sb-induced crystallization effect in annealing process. The doping of Sb contributes to the diffusion of Si atoms in the Si3N4 matrix and formation of Si-QDs. With the rise of Sb doping amount, the size of Si-QDs gradually is enlarged, and the crystallinity Xc of the films increases effectively. As Sb doping amount rises, the intensity of the PL peaks of the Si-QDs films enhances, and the full width at half maximum of the peaks becomes narrower. Meanwhile, due to the rise of the Si-QDs size, a red-shift is observed in the films with higher Sb doping density.

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中图分类号:O484.5

DOI:10.3788/gzxb20184702.0231003

基金项目:国家自然科学基金项目(No.51362031),西南地区可再生能源研究与开发协同创新中心(No.05300205020516009),云南省基础研究重点项目(No.2017FA024)和云南省高校低维材料与应用科技创新团队

收稿日期:2017-09-19

修改稿日期:2017-10-20

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作者单位    点击查看

莫镜辉:云南师范大学 可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500
袁俊宝:云南机电职业技术学院, 昆明 650203
杨培志:云南师范大学 可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500
张志恒:云南师范大学 可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500
王云祥:电子科技大学中山学院 电子薄膜与集成器件国家重点实验室中山分实验室, 广东 中山 528400
刘黎明:电子科技大学中山学院 电子薄膜与集成器件国家重点实验室中山分实验室, 广东 中山 528400

联系人作者:莫镜辉(maurice518@126.com)

备注:莫镜辉(1980-), 男, 副教授, 硕士, 主要研究方向为功能薄膜制备与表征.

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引用该论文

MO Jing-hui,YUAN Jun-bao,YANG Pei-zhi,ZHANG Zhi-heng,WANG Yun-xiang,LIU Li-ming. Preparation and Structural Properties of Sb-doped Si3N4-based Si Quantum Dot Thin Films[J]. ACTA PHOTONICA SINICA, 2018, 47(2): 0231003

莫镜辉,袁俊宝,杨培志,张志恒,王云祥,刘黎明. Sb掺杂Si3N4基Si量子点薄膜的制备与结构[J]. 光子学报, 2018, 47(2): 0231003

被引情况

【1】李 云,张博惠,高东泽,丛日东,于 威,路万兵. 纳米硅氧多层薄膜低温调控及其发光特性. 光学 精密工程, 2018, 26(8): 1960-1966

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