利用等离子体增强原子层沉积系统, 使用氮等离子体对Te掺杂GaSb的表面进行刻蚀, 改善样品的发光特性.在室温下(300 K), 发光强度提高了4倍.在低温光谱测试中, 发现了由Te掺杂导致的TeSb施主缺陷相关的发光峰, 峰位位置在0.743 eV处; 此外, 带边发光峰位随温度变化从0.796 eV移动到0.723 eV.对比室温和低温光谱, 发现当N等离子体刻蚀功率为100 W时, Te掺杂GaSb的最佳刻蚀周期是200周期; 并且氮钝化没有改变Te掺杂GaSb的发光机制, 只是提高了样品的辐射复合效率.

Using precisely atomic layer etching technology, surface etching process of Te-doped GaSb surface by nitrogen plasma in the plasma enhanced atomic layer deposition system, which can improve emission intensity. The emission intensity increased by a factor of 4 at room temperature.With low temperature photoluminescence measurement, the peak associated with TeSb donor defects due to Te doping was found, with a peak position of 0.743 eV. In addition, the changing of band edge emission with temperature from 0.796 eV to 0.723 eV was also observed. By comparing the room temperature spectra and low temperature spectra,when the nitrogen plasma etching power was 100 W, the best etching cycle of Te-GaSb was 200 cycles. Moreover, the nitrogen passivation does not changed the emission mechanism of Te-GaSb, but improves the radiative recombination efficiency of the sample.