Photonics Research, 2018, 6 (2): 02000109, Published Online: Jul. 10, 2018   

Silicon intensity Mach–Zehnder modulator for single lane 100  Gb/s applications

Miaofeng Li 1,2,3Lei Wang 2,3Xiang Li 2,3Xi Xiao 2,3,*Shaohua Yu 1,2,3
Author Affiliations
1 Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China
2 State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, China
3 National Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China
Abstract
In this paper, a substrate removing technique in a silicon Mach–Zehnder modulator (MZM) is proposed and demonstrated to improve modulation bandwidth. Based on the novel and optimized traveling wave electrodes, the electrode transmission loss is reduced, and the electro-optical group index and 50 Ω impedance matching are improved, simultaneously. A 2 mm long substrate removed silicon MZM with the measured and extrapolated 3 dB electro-optical bandwidth of >50 GHz and 60 GHz at the 8 V bias voltage is designed and fabricated. Open optical eye diagrams of up to 90 GBaud/s NRZ and 56 GBaud/s four-level pulse amplitude modulation (PAM-4) are experimentally obtained without additional optical or digital compensations. Based on this silicon MZM, the performance in a short-reach transmission system is further investigated. Single-lane 112 Gb/s and 128 Gb/s transmissions over different distances of 1 km, 2 km, and 10 km are experimentally achieved based on this high-speed silicon MZM.

Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100  Gb/s applications[J]. Photonics Research, 2018, 6(2): 02000109.

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