Photonics Research, 2018, 6 (2): 02000144, Published Online: Jul. 10, 2018   

Valence state manipulation of Sm3+ ions via a phase-shaped femtosecond laser field

Author Affiliations
1 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
2 School of Electronic & Electrical Engineering, Shangqiu Normal University, Shangqiu 476000, China
3 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
4 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
5 e-mail: sazhang@phy.ecnu.edu.cn
Abstract
The ability to manipulate the valence state conversion of rare-earth ions is crucial for their applications in color displays, optoelectronic devices, laser sources, and optical memory. The conventional femtosecond laser pulse has been shown to be a well-established tool for realizing the valence state conversion of rare-earth ions, although the valence state conversion efficiency is relatively low. Here, we first propose a femtosecond laser pulse shaping technique for improving the valence state conversion efficiency of rare-earth ions. Our experimental results demonstrate that the photoreduction efficiency from Sm3+ to Sm2+ in Sm3+-doped sodium aluminoborate glass using a π phase step modulation can be comparable to that using a transform-limited femtosecond laser field, while the peak laser intensity is decreased by about 63%, which is very beneficial for improving the valence state conversion efficiency under the laser-induced damage threshold of the glass sample. Furthermore, we also theoretically develop a (2+1) resonance-mediated three-photon absorption model to explain the modulation of the photoreduction efficiency from Sm3+ to Sm2+ under the π-shaped femtosecond laser field.

Ye Zheng, Yunhua Yao, Lianzhong Deng, Wenjing Cheng, Jianping Li, Tianqing Jia, Jianrong Qiu, Zhenrong Sun, Shian Zhang. Valence state manipulation of Sm3+ ions via a phase-shaped femtosecond laser field[J]. Photonics Research, 2018, 6(2): 02000144.

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