Chinese Optics Letters, 2018, 16 (2): 020007, Published Online: Jul. 16, 2018   

High-power MoTe2-based passively Q-switched erbium-doped fiber laser

Author Affiliations
1 State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
3 Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Abstract
Materials in the transition metal dichalcogenide family, including WS2, MoS2, WSe2, and MoSe2, etc., have captured a substantial amount of attention due to their remarkable nonlinearities and optoelectronic properties. Compared with WS2 and MoS2, the monolayered MoTe2 owns a smaller direct bandgap of 1.1 eV. It is beneficial for the applications in broadband absorption. In this letter, using the magnetron sputtering technique, MoTe2 is deposited on the surface of the tapered fiber to be assembled into the saturable absorber. We first implement the MoTe2-based Q-switched fiber laser operating at the wavelength of 1559 nm. The minimum pulse duration and signal-to-noise ratio are 677 ns and 63 dB, respectively. Moreover, the output power of 25 mW is impressive compared with previous work. We believe that MoTe2 is a promising 2D material for ultrafast photonic devices in the high-power Q-switched fiber lasers.

Mengli Liu, Wenjun Liu, Peiguang Yan, Shaobo Fang, Hao Teng, Zhiyi Wei. High-power MoTe2-based passively Q-switched erbium-doped fiber laser[J]. Chinese Optics Letters, 2018, 16(2): 020007.

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