In this paper, we propose a methodology to maximize the absorption bandwidth of a metal-insulator-metal (MIM) based absorber. The proposed structure is made of a Cr-Al2O3-Cr multilayer design. At the initial step, the optimum MIM planar design is fabricated and optically characterized. The results show absorption above 0.9 from 400 nm to 850 nm. Afterward, the transfer matrix method is used to find the optimal condition for the perfect light absorption in an ultra-broadband frequency range. This modeling approach predicts that changing the filling fraction of the top Cr layer can extend light absorption toward longer wavelengths. We experimentally proved that the use of proper top Cr thickness and annealing temperature leads to a nearly perfect light absorption from 400 nm to 1150 nm, which is much broader than that of a planar design. Therefore, while keeping the overall process lithography-free, the absorption functionality of the design can be significantly improved. The results presented here can serve as a beacon for future performance-enhanced multilayer designs where a simple fabrication step can boost the overall device response without changing its overall thickness and fabrication simplicity.