光子学报, 2018, 47 (4): 0423002, 网络出版: 2018-03-15   

三级台面InGaAs/InP雪崩光电二极管的低边缘电场设计

Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field
作者单位
1 天津大学 微电子学院 天津市成像与感知微电子技术重点实验室, 天津, 300072
2 中国科学院半导体研究所, 北京 100084
摘要
设计了一种三级台面的InGaAs/InP雪崩光电二极管, 解决了器件边缘电场和暗电流较高的问题.采用Silvaco Atlas器件仿真软件分析了边缘间距、电荷层掺杂浓度及厚度、倍增层掺杂浓度及厚度对器件性能的影响.仿真结果表明, 本文设计的三级台面器件在边缘间距为8 μm时有最优器件尺寸和较低边缘电场.采用掺杂浓度为1×1017cm-3、厚度为0.2 μm的电荷层和掺杂浓度为2×1015cm-3、厚度为0.4 μm的倍增层, 成功将高电场限制在中心区域, 使得反偏电压40 V时的边缘电场降低至2.6×105V/cm, 仅为中心电场的1/2, 增强了器件的抗击穿能力.此外, 本文设计的器件在0.9 Vbr时的暗电流降低至9.25 pA, 仅为传统两级台面器件的1/3.
Abstract
To eliminate the edge breakdown and reduce the dark current of conventional InGaAs/InP avalanche photodiode, a novel avalanche photodiode with triple-mesa structure was proposed. The effects of edge distance, doping concentration and thickness of charge layer and multiplication layer on the device performance were systematically investigated by a commercial simulator. The simulation results shown that the device was possessed of low edge electric field and reasonable device size, when the edge distance was 8 μm. In this design, the high electric field was confined within the center of device and the breakdown voltage was improved. The edge electric field of optimized device was only 2.6×105V/cm, which was a half of central region at 40 V reverse voltage. What’s more, it can reduce dark current to 9.25 pA at 0.9 Vbr, which was only 1/3 for the dark current of traditional double-mesa avalanche photodiode.

朱帅宇, 谢生, 陈宇. 三级台面InGaAs/InP雪崩光电二极管的低边缘电场设计[J]. 光子学报, 2018, 47(4): 0423002. ZHU Shuai-yu, XIE Sheng, CHEN Yu. Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field[J]. ACTA PHOTONICA SINICA, 2018, 47(4): 0423002.

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