红外技术, 2018, 40 (3): 201, 网络出版: 2018-04-09
InGaAs/InP红外雪崩光电探测器的研究现状与进展
Recent Progress in InGaAs/InP Infrared Avalanche Photodetectors
InGaAs/InP红外雪崩光电探测器 暗电流机制 单光子探测 表面等离共振效应 InGaAs/InPinfrared avalanche photodetectors dark current mechanism single-photon detection surface plasmon resonance effect
摘要
近年来, 量子卫星通信、主动成像等先进技术的应用取得了较大的进展, InGaAs/InP雪崩光电探测器作为信息接收端的核心器件起到了至关重要的作用。本文系统介绍了 InGaAs/InP雪崩光电探测器的工作原理, 分析了器件结构设计对暗电流特性的影响, 对盖格模式下多种单光子探测电路进行了综述, 同时对新型金属-绝缘体-金属结构设计的研究进展进行了介绍和展望。
Abstract
In recent years, quantum satellite communication and active imaging, where InGaAs/InP infrared avalanche photodetectors play a key role in single-photon detection, have progressed considerably. This review provides a detailed introduction to the basic principle of InGaAs/InP infrared avalanche photodetectors. The impact of the device structure characteristics on the dark current avalanche mechanism is summarized. Different circuits related to single-photon detection technology, running in Geiger mode, are presented. Several novel metal-insulator-metal structures are introduced for enhancing the quantum efficiency of InGaAs/InP infrared avalanche photodetectors, and their prospects are discussed.
胡伟达, 李庆, 温洁, 王文娟, 陈效双, 陆卫. InGaAs/InP红外雪崩光电探测器的研究现状与进展[J]. 红外技术, 2018, 40(3): 201. HU Weida, LI Qing, WEN Jie, WANG Wenjuan, CHEN Xiaoshuang, LU Wei. Recent Progress in InGaAs/InP Infrared Avalanche Photodetectors[J]. Infrared Technology, 2018, 40(3): 201.