光电子技术, 2018, 38 (1): 23, 网络出版: 2018-04-26
阳极氧化法制备Mg-Al复合氧化物绝缘层的研究
Preparation of Mg-Al Complex Oxide Insulating Layer by Anodic Oxidation
摘要
栅绝缘层是薄膜晶体管(TFT)的关键组成部分, 低成本及低温制备是其未来的发展方向。阳极氧化法是可以实现这些目的的制备工艺技术之一。本文首先采用电子束蒸发在150℃的玻璃基板上制备Mg-Al合金薄膜, 然后使用阳极氧化法形成Mg-Al复合氧化物薄膜, 并对不同制备工艺条件下的薄膜结构、绝缘性能等进行了初步研究。所获得的Mg-Al氧化物薄膜具有均匀的非晶态结构以及较好的绝缘性能, 适合于用作TFT的栅绝缘层。
Abstract
Gate insulation is a key component of thin film transistor (TFT). The flexible display has strict requirements for the preparation temperature of TFT thin film. The anodic oxidation process is low in cost and can be used for the preparation of TFT at low temperature. In this paper, Mg-Al composite oxide gate insulation layer was prepared by anodic oxidation method, and its structure and insulation properties were studied, obtaining the insulation layer with good insulation performance.
杨耀杰, 杨俊华, 谭晓婉, 李俊峰, 李庆青, 偰正才. 阳极氧化法制备Mg-Al复合氧化物绝缘层的研究[J]. 光电子技术, 2018, 38(1): 23. YANG Yaojie, YANG Junhua, TAN Xiaowan, LI Junfeng, LI Qingqing, XIE Zhengcai. Preparation of Mg-Al Complex Oxide Insulating Layer by Anodic Oxidation[J]. Optoelectronic Technology, 2018, 38(1): 23.
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