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4T-PPD-APS光子辐射响应特性分析

Analysis of Photon Radiation Response Characteristics of 4T-PPD-APS

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摘要

分析了含有4个晶体管的钳位光电二极管有源像素传感器(4T-PPD-APS)的结构特点以及γ射线光子在像元内的能量沉积过程。通过建立传感器像元及像素阵列仿真计算模型,并结合γ射线辐射响应实验,对有源像素传感器(APS)在不同光子能量及不同放射性水平条件下的响应特性进行了研究。研究结果表明:γ光子在光电二极管空间电荷区内沉积能量并形成扩散光电流是APS发生光子响应现象的根本原因;像素值的平均值随剂量率的增大呈先增大后趋于饱和的趋势;当典型事件区域内出现多个峰值时,像素值的统计值不能准确反映辐射场放射性水平。

Abstract

The structural features and the energy deposition process of γ-ray photons in the pixels for the 4 transistors pinned photodiode active pixel sensors (4T-PPD-APSs) are analyzed. By the establishment of simulation calculation models of sensor pixels and pixel array and by the experiment of γ-ray radiation response, the response characteristics of the active pixel sensors (APS) under different photon energies and different radioactivity level conditions are investigated. The research results show that, the energy deposition of the γ photon at the photodiode spatial charge area and the formation of diffused photocurrent are the root causes for the photon response phenomena occurring in the APS. The mean pixel value first increases and then tends to saturate with the increase of the dose rate. When the multiple peaks appear in the typical event areas, the statistical pixel value cannot accurately reflect the radioactivity level of the radiation fields.

Newport宣传-MKS新实验室计划
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中图分类号:TN946.1;TN65;TL99

DOI:10.3788/aos201838.0504002

所属栏目:探测器

基金项目:湖南省科技重大专项(2012FJ1007)

收稿日期:2017-11-08

修改稿日期:2017-12-25

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徐守龙:南华大学环境与安全工程学院, 湖南 衡阳 421001
邹树梁:南华大学环境与安全工程学院, 湖南 衡阳 421001
黄有骏:中国核动力研究设计院设计所, 四川 成都 610213
匡雅:南华大学环境与安全工程学院, 湖南 衡阳 421001
郭赞:南华大学环境与安全工程学院, 湖南 衡阳 421001

联系人作者:邹树梁(zousl2013@126.com)

备注:徐守龙(1988—),男,博士,讲师,主要从事电离辐射效应与探测技术方面的研究。E-mail: kane880630@hotmail.com

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引用该论文

Xu Shoulong,Zou Shuliang,Huang Youjun,Kuang Ya,Guo Zan. Analysis of Photon Radiation Response Characteristics of 4T-PPD-APS[J]. Acta Optica Sinica, 2018, 38(5): 0504002

徐守龙,邹树梁,黄有骏,匡雅,郭赞. 4T-PPD-APS光子辐射响应特性分析[J]. 光学学报, 2018, 38(5): 0504002

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