基于Silvaco二维数值仿真研究了界面陷阱对背照式p-on-n台面型InSb光伏红外探测器串音和量子效率的影响,通过分析探测器中复合率分布、空穴电流密度分布、电场分布等与界面陷阱的空间分布及浓度的相关性,揭示了界面陷阱影响探测器的稳态性能的内在物理机制.研究结果表明,N-型InSb有源区与钝化层界面处的陷阱和像元台面间的界面陷阱都会在提高串音性能的同时降低量子效率,但由于两者作用区域不同,所以对两种性能的影响程度不同.

The effects of the interface traps on the quantum efficiency and the crosstalk of a back-illuminated p-on-n mesa InSb photovoltaic infrared detector were studied based on Silvaco 2D numerical simulation. The distributions of the recombination rate, the hole current density and the electric field change with the position and the density of the interface traps, and their relationships were analyzed. The results show that the interface traps has a profound effect on the inherent physical mechanisms of the steady-state performance of the InSb detector. The traps at the N-InSb/passivation interface both on the back and between the pixel mesas improve the crosstalk performance at the cost of the decrease in the quantum efficiency. Because the regions they affect are different, the influence extents of the traps at different positions on the two steady-state performance are different.