结合外延材料工艺、芯片工艺及互连集成工艺具体情况, 分析了AlGaN外延材料、探测器阵列芯片及倒焊芯片的均匀性特点, 讨论了影响外延材料Al组分分布均匀性、芯片电阻和电容分布均匀性的各种因素。在此基础上, 提出了改进器件均匀性的技术途径。利用MOCVD外延材料生长技术, 生长了背照式AlGaN-pin异质结构外延材料, 并利用所生长的外延材料制作了320×256元AlGaN日盲紫外焦平面阵列器件。测试所制作的器件, 结果显示, 其光谱响应范围为255~280nm, 位于日盲波段, 0V偏置时272nm峰值波长响应度大于0.16A/W(外量子效率大于72.9%), 有效像元数大于99.2%, 响应非均匀性小于3.36%。

Considering the epitaxial process, chip technology and interconnection integration process, the uniformity characteristic of AlGaN epitaxial material, detector array chip and flip chip was analyzed. Various factors affecting the uniformity of Al compoment distribution, chip resistance and capacitance were discussed. On this basis of which, a technical approach was proposed to improve the uniformity of the devices. Back-illuminated AlGaN-pin heterostructure epitaxial material was grown by using MOCVD epitaxial process, and 320×256 AlGaN blind solar UV focal plane array devices were fabricated with the grown epitaxial material. Tests were carried on the devices and results indicate that the devices own a spectral response range of 255~280nm in UV band, 272nm peak wavelength response of higher than 0.16A/W (external quantum efficiency greater than 72.9%) at 0V offset, effective pixel number of greater than 99.2% and the response non-uniformity of lower than 3.36%.