一维纳米材料硅纳米线是目前重要的光电材料之一, 采用化学气相沉积法制备了硅纳米线, 实验研究了不同功率532 nm激光激发下的拉曼光谱和荧光光谱, 随着入射激光功率的增加, 一阶拉曼光谱出现红移和非对称加宽, 而且红移同入射激光功率成正比, 光致荧光光谱出现蓝移和双峰结构。 使用声子限域效应、 应变效应和激光非均匀加热效应对实验结果进行了分析, 并采用matlab模拟了入射激光功率同拉曼频移的理论关系曲线, 结果表明激光非均匀加热效应是引起拉曼光谱和光致荧光光谱变化的主要原因。

Silicon nanowires is one of key photoelectric materials. In this paper, silicon nanowires have been fabricated by chemical vapor deposition, the Raman spectra and photoluminescence spectra excited by 532 nm laser have been studied, first-order Raman peaks were found to red shift and broaden with the increase of incident power, photoluminescence blueshifted to shorter wavelength and another peak appeared. The experiment results were analyzed by phonon confinement effect, lattice stress, and nonuniform heating effect of laser, the relation between laser power and Raman shift simulated by Matlab, it was found that the nonuniform heating effect of laser is the main reason for Raman spectra and photoluminescence spectra change with incident power.