利用溶胶凝胶法制备了Mg0.3Zn0.7O薄膜, 并制作了金属半导体金属结构的深紫外探测器。研究了高质量ZnO缓冲层的引入对Mg0.3Zn0.7O薄膜的吸收谱和结晶特性以及Mg0.3Zn0.7O紫外探测器响应参数的影响。实验结果表明: ZnO缓冲层的引入使Mg0.3Zn0.7O薄膜的紫外可见光吸收谱有轻微的红移, 但可以明显提高薄膜的结晶质量, 同时ZnO/Mg0.3Zn0.7O探测器的IV特性表明, ZnO缓冲层的引入可以显著提高器件的光电流, 改善其响应特性, 在20V偏压下将Mg0.3Zn0.7O探测器的响应度由0.035A/W提高至0.63A/W。

Mg0.3Zn0.7O thin films were prepared by solgel method, and deepultraviolet detectors with metalsemiconductormetal structure were fabricated. Effects of high quality ZnO buffer layer on the optical properties of the Mg0.3Zn0.7O films and the IV characteristics of the detectors were investigated. The results show that a slight red shift occurrs in the UVvisible absorption spectrum of Mg0.3Zn0.7O thin film with ZnO buffer layer. However, the introduction of the ZnO buffer layer obviously improves the crystal quality of the film. Furthermore, the IV curves of the ultraviolet detectors exhibit that the photocurrent of the device increases significantly with the ZnO buffer layer. At a bias of 20V, the responsivity of the detector increases from 0.035A/W to 0.63A/W.