通过化学水浴法生长了铯掺杂ZnO纳米柱阵列(CZO-NRA)，将其作为电子传输层(ETL)，利用乙醇胺与二甲氧基乙醇共混溶液对CZO-NRA进行表面修饰，制备了倒置聚合物太阳能电池。研究结果表明，适量的铯掺杂提高了纳米柱的c轴择优取向结晶度，减少了ETL中由氧空位和锌填隙原子引起的深能级缺陷，减小了器件的串联电阻，增大了器件的短路电流与填充因子。表面修饰减少了CZO-NRA的表面缺陷，减小了ETL与有源层的接触电阻，抑制了界面载流子复合。与未掺杂的器件相比，表面修饰CZO-NRA器件的能量转换效率由1.27%提高至2.89%。

The Cs-doped ZnO nanorod array (CZO-NRA) is fabricated by using the chemical bath deposition technique, which is used as the electron transporting layer (ETL). The mixed solution of ethanolamine and 2-methoxyethanol is used to modify the surface of CZO-NRA, and an inverted polymer solar cell (IPSC) is fabricated. The research results show that, the moderate Cs-doping increases the preferred orientation degree of crystallinity along the c-axis for the nanorod, decreases the deep level defect in ETL induced by the oxygen vacancies and the interstitial Zn atoms, decreases the series resistance of devices, and increases the short-circuit current and the filling factor of devices. The surface modification reduces the surface defects, decreases the contact resistance between ETL and the active layer, and suppresses the interfacial carrier recombination. Compared with that of the undoped devices, the power conversion efficiency of the surface-modified CZO-NRA devices is increased from 1.27% to 2.89%.