太赫兹科学与电子信息学报, 2018, 16 (3): 383, 网络出版: 2018-07-24
新型台面型 GaAs基 BIB探测器的背景电流测试与分析
Background current testing and analysis of a novel mesa-type GaAs-based BIB detector
砷化镓 阻挡杂质带探测器 外延工艺 背景响应电流 暗电流 太赫兹探测 GaAs Blocked -Impurity-Band detector epitaxial process background current dark current terahertz detection
摘要
制备了响应在太赫兹波段的台面型砷化镓 (GaAs)基阻挡杂质带 (BIB)探测器, 并进行了背景电流的测试分析。采用金属有机化学气相沉积 (MOCVD)工艺进行外延层生长, 能更有效地控制吸收层的掺杂浓度, 提高阻挡层的纯度。另外, 搭建了 GaAs基 BIB探测器的低温测试系统, 在3.4 K测试温度下, 对器件施加 -5~5 V偏压, 测得 300 K背景响应电流在 10-2~10-6 A量级。在低电流区, 电流随偏压增加的速率相对较快; 在高电流区, 电流随偏压增加的速率变得相对平缓。且对于相同偏压绝对值, 正偏压工作模式下的背景响应电流比负偏压工作模式下的背景电流高。基于测试结果, 重点分析了 GaAs基 BIB探测器的光电输运机理。
Abstract
Novel mesa-type GaAs-based Blocked-Impurity-Band(BIB) detectors that can respond to the terahertz frequency have been fabricated. The key fabrication technology and the device structure are introduced in detail. Metal-Organic Chemical Vapor Deposition(MOCVD) is utilized to grow the absorption layer and the barrier layer. Low temperature testing system has been constructed and the characteristics of background response current have been investigated. At a test temperature of 3.4 K, after applying voltages scanning from -5 V to 5 V to the device, the response current has magnitude from 10-2 A to 10-6 A under 300 K background environment. In low current region, the slope of the current is relatively large. In high current area, however, the slope of the current becomes relatively small. According to the testing results, the photoelectric transport mechanisms of GaAs-based BIB detector are analyzed.
尚竞成, 王晓东, 王兵兵, 陈雨璐, 潘鸣. 新型台面型 GaAs基 BIB探测器的背景电流测试与分析[J]. 太赫兹科学与电子信息学报, 2018, 16(3): 383. SHANG Jingcheng, WANG Xiaodong, WANG Bingbing, CHEN Yulu, PAN Ming. Background current testing and analysis of a novel mesa-type GaAs-based BIB detector[J]. Journal of terahertz science and electronic information technology, 2018, 16(3): 383.
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