采用液晶E7作为栅介质，聚异靛蓝噻吩乙烯噻吩(PII-TVT)作为半导体，利用光刻/蚀刻技术制备了漏极-源极-栅极(D-S-G)共面的有机场效应晶体管器件，并测试了晶体管性能，对液晶作为栅介质应用于有机场效应晶体管进行研究。实验结果表明，器件表现出比较特别的晶体管性能，开关比达到103。通过光学显微镜观察发现，施加栅极电压后液晶发生形变，表明栅极电压对电极上的液晶分子的取向排列有较大影响。在施加脉冲栅压时，沟道电流随着脉冲栅压时间的延长而增强。利用液晶分子在电场下发生极化和迟滞作用，可一定程度上模拟突触的刺激时间依赖性。

Novel organic field-effect transistor (OFET) devices with drain-source-gate (D-S-G) coplanar configuration are fabricated by using E7 liquid crystal as a gate insulator and PII-TVT as active layer, through typical photolithography/etching processes, in order to prepare an OFET with liquid crystal as the gate insulator. The transistor performance was measured and experimental results indicated that the device showed some special untypical transistor performance with Ion/Ioff could be up to 103.From optical microscope images, it was observed that the liquid crystal was deformed upon the applied gate voltage, which manifested that the gate voltage has a greater impact on the alignment of the liquid crystal molecules. When the pulse gate voltage is applied, the channel current increase with the time of pulse gate voltage. Therefore, the polarization and relaxation of liquid crystal molecules under the electric field partially simulate the spike-time-dependent plasticity of synapse.