10.6 μm激光对锑化铟红外探测器的热损伤研究
Research on the Thermal Damage of InSb Infrared Detector under Wavelength of 10.6 μm Laser Irradiation
摘要
通过介绍锑化铟红外探测器的基本构成及其材料热学相关特征,阐述了激光辐照锑化铟红外探测器造成的损伤机理,采用有限元分析法,分析相关的辐照环境和条件并建立了一种三维仿真模型。仿真模拟了波长为10.6 μm 的CO2 激光辐照锑化铟红外探测器时各部分的温度变化情况,通过数值分析得出了在光斑面积一定的情况下只有激光功率密度增大到一定程度时,锑化铟探测器表面才会发生熔融损伤,且功率密度越高,造成破坏所需的时间越短;对于探测器各部分受到不同脉冲宽度的激光辐照时,损伤阈值与脉冲宽度的对数之间呈线性变化。将锑化铟探测器材料的损伤阈值区间,同已有实验数据进行对比,验证了模型的精确性。
Abstract
The basic structure and the thermal properties of materials used in InSb infrared detectors are introduced. The mechanism behind the damage caused to the InSb infrared detector due to laser irradiation is elaborated. We build a 3D simulation model and analyze related irradiation environment and conditions by using a finite element method. The change of temperature taking place in each part of the InSb infrared detector under a CO2 laser irradiation of wavelength 10.6 μm is simulated. The result obtained using the numerical analysis method shows that the increase of the laser power density to a certain extent can make the surface of InSb detector melt only if the spot area is unchanged. The higher the power density, the shorter the time it takes to cause the damage. Furthermore, the damage threshold is found to change linearly with the logarithm of pulse width when each part of the InSb detector is irradiated with a laser of a different pulse width. Thus, the accuracy of the InSb detector model is verified by comparing it with the existing experimental data for damage threshold interval.
中图分类号:TN215
所属栏目:材料与器件
基金项目:北京市自然科学基金资助青年项(4154071),北京市优秀人才培养资助青年骨干个人项目(201400002012G105)
收稿日期:2017-04-01
修改稿日期:2017-07-28
网络出版日期:--
作者单位 点击查看
牛春晖:北京信息科技大学 仪器科学与光电工程学院,北京 100192
李晓英:北京信息科技大学 仪器科学与光电工程学院,北京 100192
张巧云:北京信息科技大学 仪器科学与光电工程学院,北京 100192
联系人作者:联系作者
备注:张悦(1990-)女,硕士研究生,现主要从事光电对抗方面的研究。
【2】Amit Pratap Singh, Avinashi Kapoor, Tripathi K N, et al. Laser damage studies of silicon surfaces using ultra-short laser pulses[J]. Opt. & Laser Technol, 2002, 34(1): 37-43.
【3】刘飞达, 顾卫丰, 姜永军, 等. 1.06 m 连续激光对InSb、Si、Ge、Ni、 Cu 材料热损伤数值分析[J]. 长春理工大学学报: 自然科学版, 2016, 39(5): 20-24.
LIU Feida, GU Weifeng, JIANG Yongjun, et al. Numerical analysis of the thermal damage to InSb, Si, Ge, Ni, Cu materials induced by 1.06 m continuous laser[J]. Journal of Changchun University of Science and Technology: Natural Science Edition, 2016, 39(5): 20-24.
【4】Kuanr A V, Bansal S K, Srivastava G P. Laser-induced damage in InSb at 1.06 m wavelengtha comparative study with Ge, Si, and GaAs[J]. Opt. & Laser Technol., 1996, 28(5): 345-353.
【5】Bartoli F, Esterowitz L, Allen R. A generalized thermal model for laser damage in infrared detectors[J]. Applied Physics, 1976, 47(7): 2875-2881.
【6】孟庆端, 张晓玲, 张立文, 等. 128×128 InSb 探测器结构模型研究[J]. 物理学报, 2012, 62(19): 190701.
MENG Qingduan, ZHANG Xiaoling, ZHANG Liwen, et al. Structural modeling of 128×128 InSb focal plane array detector [J]. Acta Phys. Sin., 2012, 62(19): 190701.
【7】李鹏飞, 张立文, 孟庆端, 等. 128×128 元锑化铟红外焦平面探测器 热-应力耦合分析[J]. 激光与红外, 2013, 43(9): 1025-1029.
LI Pengfei, ZHANG Liwen, MENG Qingduan, et al. Thermal-stress coupling analysis on 128×128 InSb infrared focal plane array detector[J]. Laser & Infrared, 2013, 43(9): 1025-1029.
【8】李邓玥. 硅基锑化铟薄膜的制备与光电性能研究[D]. 哈尔滨: 哈尔滨 工业大学, 2013.
LI Dengyue. Preparation and optical-electronical properties of InSb film on Si-based substrate[D]. Harbin: Harbin Institute of Technology, 2013.
【10】孟庆端, 贵磊, 张晓玲, 等. 基于内聚区模型的InSb 面阵探测器分层 研究[J]. 物理学报, 2014, 63(11): 118503.
MENG Qingduan, GUI Lei, ZHANG Xiaoling, et al. Delamination study of InSb infrared focal plane arrays using a cohesive zone model[J]. Acta. Phys. Sin., 2014, 63(11): 118503.
【13】李娟. 连续激光作用下半导体材料热效应的数值分析[D]. 哈尔滨: 哈尔滨师范大学, 2012.
LI Juan. Numerical analysis of thermal effects of semiconductor materials based on continuous wave laser irradiation[D]. Harbin: Harbin Normal University, 2012.
【14】李彦文, 刘成海. InSb 材料的激光吸收机制和熔融破坏阈值的研究[J]. 强激光与粒子束, 1990, 2(3): 334-338.
LI Yanwen, LIU Haicheng. The research on laser absorption mechanisms and laser-induced damage thresholds for InSb material[J]. High Power Laser and Particle Beams, 1990, 2(3): 334-338.
引用该论文
ZHANG Yue,NIU Chunhui,LI Xiaoying,ZHANG Qiaoyun. Research on the Thermal Damage of InSb Infrared Detector under Wavelength of 10.6 μm Laser Irradiation[J]. Infrared Technology, 2018, 40(6): 528-533
张 悦,牛春晖,李晓英,张巧云. 10.6 μm激光对锑化铟红外探测器的热损伤研究[J]. 红外技术, 2018, 40(6): 528-533
被引情况
【1】范永杰,秦强. 激光辐照 HgCdTe探测器输出特性与软损伤判定. 红外技术, 2020, 42(9): 829-832
【2】范永杰,秦强. 激光辐照 HgCdTe探测器输出特性与软损伤判定. 红外技术, 2020, 42(9): 829-832