Photonic Sensors, 2018, 8 (3): 03213, 网络出版: 2018-08-04   

Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots

Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots
作者单位
1 School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
2 School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China
摘要
Abstract
The strong influences of temperature and vacuum on the optical properties of In0.3Ga0.7As surface quantum dots (SQDs) are systematically investigated by photoluminescence (PL) measurements. For comparison, optical properties of buried quantum dots (BQDs) are also measured. The line-width, peak wavelength, and lifetime of SQDs are significantly different from the BQDs with the temperature and vacuum varied. The differences in PL response when temperature varies are attributed to carrier transfer from the SQDs to the surface trap states. The obvious distinctions in PL response when vacuum varies are attributed to the SQDs intrinsic surface trap states inhibited by the water molecules. This research provides necessary information for device application of SQDs as surface-sensitivity sensors.

, , , , , . Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots[J]. Photonic Sensors, 2018, 8(3): 03213. Guodong WANG, Huiqiang JI, Junling SHEN, Yonghao XU, Xiaolian LIU, Ziyi FU. Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots[J]. Photonic Sensors, 2018, 8(3): 03213.

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