利用磁控溅射方法制备了引入Na或Cu元素前后Si/NiO异质结。实验结果表明, Na元素引入后的Si/NiO∶Na异质结的整流特性最佳。 此时, Si/NiO∶Na异质结光学透过率可以达到70%, 这可能是由于Si/NiO∶Na异质结的结晶质量较优、薄膜内缺陷少所致。Si/NiO∶Na异质结I-V曲线的拟合结果显示界面态状态也会影响其整流特性。 而Si/NiO和Si/NiO∶Cu异质结都没能获得较好的整流特性, 可能是薄膜内缺陷增多所致。这一结论得到了XRD、SEM、AFM和UV结果的支持。

The Si/NiO heterojunctions with and without Na or Cu doping were prepared by the magnetron sputtering method. The best rectifying characteristics appears in the Si/NiO∶Na heterojunction, where the average optical transmittance can reach to 70% in the visible range, which may be explained by the reduced defects due to the improved crystallization. The fitted I-V curve of Si/NiO∶Na heterojunction indicates that the interface state also affects the rectifying property. Good rectifying property hasnt been observed in Si/NiO and Si/NiO∶Cu heterojunctions because of the appearance of more defects. These results are also evidenced by XRD, SEM, AFM and UV results.