为了提高半导体激光器件的可靠性, 研究了AlN过渡热沉上AuSn焊料不同配比对半导体激光器器件性能的影响。利用MOCVD 生长975 nm芯片, 通过对半导体激光器器件表面形貌、空洞、光谱特性、热阻特性以及寿命测试, Au组分比重低于72%的AlN过渡热沉封装器件表面颜色明显不同于组分相对较高的, 空洞较多, 平均波长红移约5 nm, 在寿命试验中过早失效, 最终得出AuSn焊料中Au组分比重最好大于72%, 小于80%, 才能保证封装器件焊接质量, 为实际生产和使用提供了指导意义。

In order to improve the reliability of semiconductor laser devices, the effect of AlN transition heat sink with different ratio AuSn solder on the performance of semiconductor laser devices was studied. The 975 nm dies were grown using MOCVD. The surface morphology, voidicity, spectral characteristics, thermal resistance and lifetime of the semiconductor laser device were measured. Compared to the devices on the AlN transition heat sinks with more Au, the devices on the sinks with less 72% Au that the surface morphology was significantly different and the average wavelength increased about 5 nm, were prematurely lost in the life test. It was found that the Au content in the AuSn solder should be controlled within a certain range, preferably greater than 72%, less than 80%, in order to ensure the quality of packaging equipment. That became important guiding significance for the actual production and the user.