在半导体激光器芯片与热沉的焊接过程中不可避免地会在焊料层产生一些空洞,而空洞会在铟的电迁移以及电热迁移作用下慢慢变大,使芯片局部温度迅速上升, 进而影响半导体激光器的性能。针对10 W的808 nm单管焊装半导体激光器建立三维有限元模型, 分别模拟计算了空洞面积、空洞厚度和空洞位置与结温的关系。芯片出光面边缘的有源区区域形成的空洞对芯片的结温影响更为显著, 最后得到空洞面积与器件结温的关系, 并表明对空洞率控制的重要性。

Semiconductor laser chip and heat sink in the welding process will inevitably produce some holes in the solder layer. These voids will become larger in the electromigration and electromigration of indium. The local temperature of the chip rises rapidly, and affects the performance of semiconductor lasers. A three-dimensional finite element model of 808 nm single-tube welding semiconductor lasers with power of 10 W was established, and the relationship between void area, void thickness and void position was calculated. The results show that the voids formed in the active region of the edge of the chip have a more significant influence on the junction temperature of the chip. Finally, the relationship between cavity area and junction temperature was obtained. The importance of void ratio control was also demonstrated.