采用离子注入法在GaN薄膜中实现了Er3+和Eu3+离子的共掺杂.以阴极荧光光谱仪为主要表征手段, 研究样品的光学特性和能量传递机理.在300 K温度下, Er3+和Eu3+共掺杂GaN薄膜能够实现绿光和红光的同时发射.随着Er3+离子掺杂剂量的增加, Eu3+离子相关发光峰的强度减弱, Er3+离子对应的两个相关发光峰强度比值减小, 表明Er3+和Eu3+离子之间发生了能量传递, 能量传递的方向为Eu3+→Er3+.变温阴极荧光光谱显示, Er3+离子的2H11/2和4S3/2两个能态相关的跃迁峰相对强度比值随着温度升高而降低, 主要是由两个能级之间的热耦合导致.改变Er3+离子的掺杂剂量, 能够调控GaN: Er3+/Eu3+样品的光学色度坐标和色温, 表明此材料可用于发光器件.

The samples of Er3+ and Eu3+ co-doped GaN epitaxial films were prepared by ion implantation technique. Their optical properties and energy transfer mechanism were investigated using cathodoluminescence. For Er3+ and Eu3+ co-doped GaN films sample, the mixed color of green and red light can be realized at 300 K. Moreover, the emission intensity of Eu3+ ions and intensity ratio of Er3+ ions were decreased with the increase of Er3+ ions implantation dose, which proved the existence of the energy transfer from Eu3+ to Er3+ in the GaN host. The result of temperature-dependent cathodoluminescence spectra shows that the intensity ratio is decreased with the temperature increasing, which indicates there is a thermal coupling of 2H11/2 and 4S3/2 states of Er3+ ions. The calculated chromaticity coordinates and color correlated temperature can be tuned through adjusting the implantation dose ratio of Er3+ to Eu3+. This work shows Er3+ and Eu3+ co-doped GaN films are promising materials applied in optical devices.