光子学报, 2018, 47 (5): 0523001, 网络出版: 2018-09-07
用刻蚀坑方法抑制平面型InGaAs/InP盖革模式APD的边缘击穿
Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes
雪崩光电二极管 光探测器 离化积分 电场击穿 刻蚀 反应离子刻蚀 盖革计数 Avalanche photodiodes Photodetectors Ionization integral Electric breakdown Etching Reactive ion etching Geiger counters
摘要
通过测量平面型InGaAs/InP雪崩光电二极管闭管扩散器件帽层InP中Zn杂质的分布, 拟合出掺杂浓度随扩散深度的变化函数, 并且利用离化积分研究不同倍增层厚度下的最佳刻蚀坑深度和最佳刻蚀方法.结果表明在帽层深度不变的情况下, 最佳刻蚀坑深度会随着倍增层厚度而变化, 当倍增层厚度为1 μm左右时刻蚀坑深度在0.1~0.3 μm之间.采取反应离子刻蚀可以获得良好的刻蚀坑形貌, 有利于边缘击穿的抑制.
Abstract
By measuring the distribution of impurity Zn in InP of planar-type InGaAs/InP Geiger mode Avalanche Photodiodes,the function of doping concentration with diffusion depth was fitted, and the optimum depth of etch well at different multiplication layer thickness as well as the best etching method were studied using ionization integral.The results show that the optimum etch well depth is varied with multiplication layer thickness when the thickness of top InP is constant.And when the multiplication layer thickness is about 1 μm, the well depth should be between 0.1 μm and 0.3 μm. Reactive ion etching can obtain a good etch well morphology, which is beneficial to the suppression of edge breakdown.
侯丽丽, 韩勤, 李彬, 王帅, 叶焓. 用刻蚀坑方法抑制平面型InGaAs/InP盖革模式APD的边缘击穿[J]. 光子学报, 2018, 47(5): 0523001. HOU Li-li, HAN Qin, LI Bin, WANG Shuai, YE Han. Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes[J]. ACTA PHOTONICA SINICA, 2018, 47(5): 0523001.