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高光提取效率倒装发光二极管的设计与优化

Design and Optimization of Flip-Chip Light-Emitting Diode with High Light Extraction Efficiency

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摘要

为了提高倒装发光二极管(LED)的光提取效率, 提出在蓝宝石衬底出光面上制备一层SiO2介质光栅, 形成表面光栅倒装LED结构。利用RSOFT软件的CAD模块建立表面光栅倒装LED模型, 随后使用RSOFT软件的LED模块模拟并优化该表面光栅倒装LED。通过模拟优化和理论分析可得, 当p-GaN层厚度hp=220 nm, n-GaN层厚度hn=100 nm, 蓝宝石衬底厚度hs=130 nm, 光栅周期p=260 nm, 光栅厚度hg=20 nm, 光栅占空比f=0.02时, 表面光栅倒装LED的光提取效率可以达到49.12%, 相比于普通最优倒装LED的光提取效率(30.56%)提高了63%。本研究可为后续设计高光提取效率的LED提供参考, 同时亦可为制备器件提供理论指导。

Abstract

In order to improve the light extraction efficiency of flip-chip light-emitting diode (LED), we propose to prepare a SiO2 dielectric grating on the sapphire substrate surface and form a surface grating flip-chip LED structure. The surface grating flip-chip LED model is established by the CAD module of RSOFT software. Then, the LED module of RSOFT software is used to simulate and optimize the surface grating flip-chip LED. Simulation optimization and theoretical analysis show that, when p-GaN layer thickness hp=220 nm, n-GaN layer thickness hn=100 nm, sapphire substrate thickness hs=130 nm, grating period p=260 nm, grating thickness hg=20 nm, grating duty cycle f=0.02, the light extraction efficiency of the surface grating flip-chip LED can reach to 49.12%, compared to the best normal flip-chip LED light extraction efficiency (30.56%), the efficiency raises by 63%. The research can provide theoretical research methods for the future design of LED with high light extraction efficiency, and provide theoretical guidance for the preparation of devices.

Newport宣传-MKS新实验室计划
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中图分类号:TN312

DOI:10.3788/lop55.092302

所属栏目:光学器件

基金项目:国家自然科学基金(61650404)、浙江省教育厅一般科研项目(Y201738091)、衢州市科技计划(2014Y017, 2017G16)、赣南师范大学招标课题(16zb04)

收稿日期:2018-03-23

修改稿日期:2018-04-09

网络出版日期:2018-04-15

作者单位    点击查看

江孝伟:衢州职业技术学院信息工程学院, 浙江 衢州 324000北京工业大学电子信息与控制工程学院光电子技术实验室, 北京 100124
赵建伟:衢州职业技术学院信息工程学院, 浙江 衢州 324000
武华:北京工业大学电子信息与控制工程学院光电子技术实验室, 北京 100124赣南师范大学物理与电子信息学院, 江西 赣州 341000

联系人作者:江孝伟(JosephJiangquzhi@126.com)

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引用该论文

Jiang Xiaowei,Zhao Jianwei,Wu Hua. Design and Optimization of Flip-Chip Light-Emitting Diode with High Light Extraction Efficiency[J]. Laser & Optoelectronics Progress, 2018, 55(9): 092302

江孝伟,赵建伟,武华. 高光提取效率倒装发光二极管的设计与优化[J]. 激光与光电子学进展, 2018, 55(9): 092302

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