红外与激光工程, 2018, 47 (5): 0503001, 网络出版: 2018-09-12
2 μm InGaSb/AlGaAsSb量子阱激光器理想因子的研究
Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser
摘要
展示了一种低阈值(~131 A/cm2)2 μm InGaSb/AlGaAsSb单量子阱(Single Quantum Well, SQW)激光器, 并对该激光器的理想因子n进行了研究。激光器的总体理想因子n由中央pn结的理想因子n和n型GaSb衬底与n型金属之间形成的整流结的理想因子n两部分组成。当温度从20 ℃升高到80 ℃时, 激光器的总体理想因子n从4.0降低至3.3。该结果与所使用的理论模型以及独立的GaSb材料整流结(pn结、GaSb/金属结等)理想因子n的数值是相吻合的。
Abstract
2 μm InGaSb/AlGaAsSb single quantum well(SQW) laser with low threshold current density of ~131 A/cm2 and its ideality factor n was presented. The ideality factors n of the central p-n junction and the n-GaSb/metal junction sum up to be the total ideality factor n of the laser. The total ideality factor n decreases from 4.0 to 3.3 when the temperature was increased from 20 to 80 ℃. The results are in good agreement with the applied theoretical model as well as the ideality factor n of the individual GaSb-based junctions(p-n junction, GaSb/metal junction etc.).
李翔, 汪宏, 乔忠良, 张宇, 徐应强, 牛智川, 佟存柱, 刘重阳. 2 μm InGaSb/AlGaAsSb量子阱激光器理想因子的研究[J]. 红外与激光工程, 2018, 47(5): 0503001. Li Xiang, Wang Hong, Qiao Zhongliang, Zhang Yu, Xu Yingqiang, Niu Zhichuan, Tong Cunzhu, Liu Chongyang. Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser[J]. Infrared and Laser Engineering, 2018, 47(5): 0503001.