红外与激光工程, 2018, 47 (5): 0503003, 网络出版: 2018-09-12
2 μm GaSb基大功率半导体激光器研究进展
Research progress of 2 μm GaSb-based high power semiconductor laser
摘要
2 μm波段GaSb基大功率激光器在诸多领域具有广阔的应用前景,如气体探测、医疗美容、激光加工等。基于功率提升, 综述和讨论了2 μm波段GaSb基激光器结构的发展过程, 介绍了目前国内外的研究状况, 讨论和分析了GaSb基激光器提升功率、效率的主要技术问题。并详细介绍了该领域近年来在传统激光器中引入的两种新结构, 分析了其技术优势。指出目前2 μm波段GaSb基大功率激光器面临瓶颈, 并讨论了其发展趋势。
Abstract
2 μm GaSb-based high power semiconductor laser has a promising prospect in many fields, such as gas detection, medical cosmetology and laser processing. The structure development of 2 μm GaSb-based high power semiconductor laser based on power improvement was reviewed and discussed, the current research situation at home and abroad was introduced, and the principal technical issues in power and efficiency improvement were discussed. Two new structures introduced in traditional lasers in this field were introduced in detail, and their technical advantages were analyzed. It also pointed out the current 2 μm GaSb-based high power semiconductor lasers were facing bottlenecks, and their development trends were discussed.
谢圣文, 杨成奥, 黄书山, 袁野, 邵福会, 张一, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. 2 μm GaSb基大功率半导体激光器研究进展[J]. 红外与激光工程, 2018, 47(5): 0503003. Xie Shengwen, Yang Cheng′ao, Huang Shushan, Yuan Ye, Shao Fuhui, Zhang Yi, Shang Jinming, Zhang Yu, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Research progress of 2 μm GaSb-based high power semiconductor laser[J]. Infrared and Laser Engineering, 2018, 47(5): 0503003.
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