光电子快报(英文版), 2017, 13 (3): 161, Published Online: Sep. 13, 2018  

A 45-channel 100 GHz AWG based on Si nanowire waveguides

Author Affiliations
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
Abstract
A 45-channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about ?23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma (ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of -8 dB.

LI Kai-li, ZHANG Jia-shun, AN Jun-ming, LI Jian-guang, WANG Liang-liang, WANG Yue, WU Yuan-da, YIN Xiao-jie, HU Xiong-wei. A 45-channel 100 GHz AWG based on Si nanowire waveguides[J]. 光电子快报(英文版), 2017, 13(3): 161.

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