Opto-Electronic Advances, 2018, 1 (6): 180011, Published Online: Mar. 19, 2019  

Probing defects in ZnO by persistent phosphorescence

Author Affiliations
1 Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China
2 Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China
Abstract
Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.267 eV) in intentionally undoped ZnO single crystal by selecting the below-band-gap (BBG) optical excitations (e.g. light wavelengths of 385 nm and 450 nm). Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange luminescence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.

Honggang Ye, Zhicheng Su, Fei Tang, Yitian Bao, Xiangzhou Lao, Guangde Chen, Jian Wang, Shijie Xu. Probing defects in ZnO by persistent phosphorescence[J]. Opto-Electronic Advances, 2018, 1(6): 180011.

引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!