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γ射线辐照快速生长KDP晶体的性能

Performance of Rapidly Grown KDP Crystals Irradiated by Gamma Ray

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摘要

采用连续过滤快速横向生长技术, 有效增大了磷酸二氢钾(KDP)晶体的Z向长度, 提高了单位晶体II类元件的切片率。使用不同剂量的γ射线辐照II类晶体坯片后, 测试其光学性能与抗激光损伤阈值。研究结果显示, 不同剂量的γ射线辐照不会改变晶格内部的振动模式, 但会降低912 cm-1处的晶格振动强度; γ射线辐照诱导缺陷的种类不变, 但随着辐照剂量的增大, 缺陷浓度增大; 晶体坯片的损伤阈值随着辐照剂量的增大而减小。

Abstract

The rapid transversal growth method based on continuous filtration is applied to effectively increase the Z-direction length of the potassium dihydrogen phosphate (KDP) crystal and improve the II-type plate yield of the unit crystal. Different doses of γ ray are used to irradiate on the II-type crystal. The optical performance and the laser induced damage threshold are tested. The research results show that different doses of γ ray irradiation do not change the lattice vibration modes within crystals, but can reduce the vibration intensity of the lattice at 912 cm-1. The defect types induced by the γ ray irradiation do not change, but the defect density increases with the increase of the irradiation dose. In addition, the laser induced damage threshold of crystal plates decreases with the increase of the irradiation dose.

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中图分类号:O77+4

DOI:10.3788/cjl201845.1003004

所属栏目:材料与薄膜

收稿日期:2018-05-11

修改稿日期:2018-05-22

网络出版日期:2018-05-24

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谢晓义:中国科学院上海光学精密机械研究所强激光材料重点实验室薄膜光学实验室, 上海 201800中国科学院大学, 北京 100049
朱茂东:中国科学院上海光学精密机械研究所强激光材料重点实验室薄膜光学实验室, 上海 201800中国科学院大学, 北京 100049
王斌:中国科学院上海光学精密机械研究所强激光材料重点实验室薄膜光学实验室, 上海 201800
王虎:中国科学院上海光学精密机械研究所强激光材料重点实验室薄膜光学实验室, 上海 201800
齐红基:中国科学院上海光学精密机械研究所强激光材料重点实验室薄膜光学实验室, 上海 201800
邵建达:中国科学院上海光学精密机械研究所强激光材料重点实验室薄膜光学实验室, 上海 201800

联系人作者:邵建达(jdshao@mail.shcnc.ac.cn); 谢晓义(xiaoyixie13@siom.ac.cn);

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引用该论文

Xie Xiaoyi,Zhu Maodong,Wang Bin,Wang Hu,Qi Hongji,Shao Jianda. Performance of Rapidly Grown KDP Crystals Irradiated by Gamma Ray[J]. Chinese Journal of Lasers, 2018, 45(10): 1003004

谢晓义,朱茂东,王斌,王虎,齐红基,邵建达. γ射线辐照快速生长KDP晶体的性能[J]. 中国激光, 2018, 45(10): 1003004

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