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Accurate extraction of fabricated geometry using optical measurement

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Abstract

We experimentally demonstrate extraction of silicon waveguide geometry with subnanometer accuracy using optical measurements. Effective and group indices of silicon-on-insulator (SOI) waveguides are extracted from the optical measurements. An accurate model linking the geometry of an SOI waveguide to its effective and group indices is used to extract the linewidths and thicknesses within respective errors of 0.37 and 0.26 nm on a die fabricated by IMEC multiproject wafer services. A detailed analysis of the setting of the bounds for the effective and group indices is presented to get the right extraction with improved accuracy.

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DOI:10.1364/prj.6.001008

所属栏目:Silicon photonics

基金项目:Fonds Wetenschappelijk Onderzoek (FWO)10.13039/501100003130 (G013815N); Agentschap Innoveren en Ondernemen (VLAIO)10.13039/100012331.

收稿日期:2018-07-10

录用日期:2018-08-17

网络出版日期:2018-09-05

作者单位    点击查看

Yufei Xing:Photonics Research Group, Ghent University-IMEC, Ghent, BelgiumCenter of Nano and Biophotonics, Ghent, Belgium
Jiaxing Dong:Photonics Research Group, Ghent University-IMEC, Ghent, BelgiumCenter of Nano and Biophotonics, Ghent, Belgium
Sarvagya Dwivedi:Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106-9560, USA
Umar Khan:Photonics Research Group, Ghent University-IMEC, Ghent, BelgiumCenter of Nano and Biophotonics, Ghent, Belgium
Wim Bogaerts:Photonics Research Group, Ghent University-IMEC, Ghent, BelgiumCenter of Nano and Biophotonics, Ghent, Belgium

联系人作者:Yufei Xing(yufei.xing@ugent.be)

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引用该论文

Yufei Xing, Jiaxing Dong, Sarvagya Dwivedi, Umar Khan, and Wim Bogaerts, "Accurate extraction of fabricated geometry using optical measurement," Photonics Research 6(11), 1008-1020 (2018)

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