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Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon

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Abstract

We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than ?150 dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.

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DOI:10.1364/prj.6.001062

所属栏目:Silicon photonics

基金项目:Engineering and Physical Sciences Research Council (EPSRC)10.13039/501100000266 (EP/P006973/1); Royal Academy of Engineering10.13039/501100000287 (RF201617/16/28); Chinese Scholarship Council.

收稿日期:2018-08-08

录用日期:2018-09-13

网络出版日期:2018-09-13

作者单位    点击查看

Mengya Liao:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Siming Chen:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Zhixin Liu:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Yi Wang:State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
Lalitha Ponnampalam:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Zichuan Zhou:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Jiang Wu:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Mingchu Tang:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Samuel Shutts:Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
Zizhuo Liu:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Peter M. Smowton:Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
Siyuan Yu:State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
Alwyn Seeds:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
Huiyun Liu:Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK

联系人作者:Siming Chen(siming.chen@ucl.ac.uk)

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引用该论文

Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, and Huiyun Liu, "Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon," Photonics Research 6(11), 1062-1066 (2018)

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