研究了化学机械抛光（ CMP）过程中抛光液组分对硫化镉（ CdS）晶片表面粗糙度的影响。通过分析磨粒浓度、氧化剂种类及浓度、 pH值对 CdS晶片表面粗糙度的影响后，得到了用于 CdS晶片 Cd面 CMP的抛光液配比，即磨粒 SiO2浓度为 20%，氧化剂 NaClO的浓度为 2.5%，pH值为 10.64。在优化其他工艺条件下，采用该抛光液对 CdS晶片 Cd面进行抛光，可以获得高质量的抛光表面，经原子力显微镜（AFM）测试，在 10 .m×10 .m的区域内，Cd面表面粗糙度 Ra仅为 0.171 nm。该抛光液也适用于 S面的抛光，S面表面粗糙度 Ra可达到 0.568 nm，从而达到双面共用的效果。

This paper studies how the composition of polishing slurry affects the surface roughness of the CdS wafer in CMP. By analyzing the influence of the concentration of abrasives, the variety and concentration of oxidants, and the pH value, we obtained the composition of polishing slurry that was used for the Cd surface of the CdS wafer in CMP: The concentration of the abrasive SiO2 is 20%; the oxidant is NaClO with a concentration of 2.5%; and the pH value is 10.64. Under optimized process conditions, the high-quality polished Cd surface of the CdS wafer can be obtained using the aforementioned polishing slurry. Through testing by AFM in a randomly selected 10 .m×10 .m area, the average roughness (Ra) of the Cd surface is only 0.171 nm. It can also be used for the S face in CMP. The average roughness (Ra) of the S face is 0.568 nm, which means the composition of polishing slurry is suitable for both faces of the CdS wafer in CMP.