光学与光电技术, 2018, 16 (6): 18, 网络出版: 2018-12-17  

可实现三维磁场传感的硅基磁光微环芯片设计

Design of Silicon-Based Magneto-Optical Micro-Ring Chip for 3D Magnetic Field Sensing
作者单位
电子科技大学光纤传感与通信教育部重点实验室, 四川 成都 611731
摘要
根据磁光非互易相移原理,通过分析硅基磁光波导中导波光模式对磁化强度的敏感性,提出一种CeYIG/Si-CeYIG/SiO2硅基磁光波导结构,仿真分析了其模场分布和有效折射率的磁化强度依赖关系。将两个硅基磁光波导垂直放置并分别组成两个微环谐振器,进而设计出三维磁场传感芯片,通过测量两个微环中TE和TM两种模式下微环谐振波长的移动,可获得磁化强度或磁场的大小和方向信息。研究表明,在1 550 nm波长附近,通过优化波导截面尺寸,在CeYIG饱和磁化范围内,该磁场传感芯片在其法向和切向的磁场灵敏性分别为和,谐振波长的可移动范围约为200 pm。利用平面芯片结构实现了对三维磁场的测量,对三维磁场传感器件的小型化和集成化具有一定的指导意义。
Abstract
According to the principle of magneto-optical(MO) nonreciprocal phase shift, along with the sensitivity of different guided wave modes to magnetization in silicon-based magneto-optical waveguides, a new silicon-based waveguide structure of CeYIG/Si-CeYIG/SiO2 to form the microring resonators is presented, and the magnetization dependences of its mode field distribution and effective refractive index are simulated. A three-dimensional magnetic field sensor chip is designed by using two micro-ring resonators, in which the silicon-based magneto-optical waveguides are perpendicularly placed each other. The magnitude and direction of magnetization or magnetic field can be determined by their resonant wavelength shifts for the TE and TM modes. The simulated results show that the magnetic sensitivity of this sensor chip at the wavelength of 1 550 nm are respectively 0.080 pm/[(kA/m)·μm] and 0.105 pm/[(kA/m)·μm] in the normal and tangential directions in the range of saturation magnetization for CeYIG material, and the measurable resonant wavelength shift is up to 200 pm at the saturation magnetization. The planar chip structure is usd to achieve the measurement of three-dimensional magnetic fields, which has a certain guiding significance for the miniaturization and integration of three-dimensional magnetic field sensor devices.

倪双, 武保剑, 刘亚文. 可实现三维磁场传感的硅基磁光微环芯片设计[J]. 光学与光电技术, 2018, 16(6): 18. NI Shuang, WU Bao-jian, LIU Ya-wen. Design of Silicon-Based Magneto-Optical Micro-Ring Chip for 3D Magnetic Field Sensing[J]. OPTICS & OPTOELECTRONIC TECHNOLOGY, 2018, 16(6): 18.

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