采用ICP(inductively coupled plasma etching)刻蚀与湿法腐蚀相结合的方式, 研制了像元中心距为10 μm、截止波长2.6 μm的p-i-n型10 × 10元延伸波长InGaAs探测器.不同温度下的电流—电压特性研究和激活能分析, 显示了器件优异的暗电流特性.在室温下, -10 mV偏压时器件的暗电流和优质因子R0A分别为0.45 nA和14.7 Ω·cm2, 量子效率可达到63%.为了证实像元中心距减小并未影响器件性能, 与同种材料中心距30 μm的InGaAs焦平面阵列进行了对比分析.相似的实验结果进一步证明了工艺的可行性, 对今后实现高密度、大面阵延伸波长InGaAs探测器具有重要的指导意义.

A sub-10 μm InGaAs (IGA) focal plane array (FPA), with cut-off wavelength of 2.6 μm has been developed. The pixel pitch is reduced significantly comparing with that of reported extended wavelength IGA FPAs. To verify the feasibility of technology, the performance of sub-10 μm IGA FPA was tested and compared with 30 μm pixel pitch IGA FPA, which was fabricated from the same epitaxial material. The sub-10 μm IGA FPA exhibits high performances in terms of dark current (0.45 nA @VR = 10 mV) and R0A (14.7 Ω·cm2) at room temperature. Its quantum efficiency can reach 63%. The comparable performances to 30 μm pixel pitch IGA FPA illustrate that the sub-10 μm IGA FPA fulfils the needs of large formats (>1 K×1 K) and high densities in extended wavelength IGA detectors.