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InAs/AlSb 异质结的Pd/Ti/Pt/Au 合金化欧姆接触

Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer

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摘要

为了得到较低的接触电阻, 研究了帽层未掺杂的InAs/AlSb 异质结的Pd/Ti/Pt/Au合金化欧姆接触.利用传输线模型(TLM)测量了接触电阻Rc.在最佳的快速热退火条件为275 °C和20 s时, InAs/AlSb 异质结的Pd/Ti/Pt/Au接触电阻值为0.128 Ω·mm.TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成.研究表明经过Pd/Ti/Pt/Au 合金化欧姆接触后Rc有明显减小, 适用于InAs / AlSb 异质结的应用.

Abstract

In order to achieve low contact resistances of InAs/AlSb heterostructures with the undoped InAs cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated. The contact resistance Rc is evaluated by using transmission-line-model (TLM) measurements. A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 °C and annealing time of 20 s. The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing. This study shows that the contact resistance Rc is reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.

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中图分类号:TN304.2, TN305

DOI:10.11972/j.issn.1001-9014.2018.06.007

基金项目:Supported by Advanced Research Foundation of China (914xxx803-051xxx111), National Defense Advanced Research project (315xxxxx301), and National Defense Innovation Program (48xx4)

收稿日期:2018-01-19

修改稿日期:2018-04-11

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作者单位    点击查看

张静:西安电子科技大学 宽带隙半导体技术国家重点学科实验室, 陕西 西安 710071中国科学院半导体研究所, 超晶格国家重点实验室, 北京 100083
吕红亮:西安电子科技大学 宽带隙半导体技术国家重点学科实验室, 陕西 西安 710071
倪海桥:中国科学院半导体研究所, 超晶格国家重点实验室, 北京 100083
牛智川:中国科学院半导体研究所, 超晶格国家重点实验室, 北京 100083
张义门:西安电子科技大学 宽带隙半导体技术国家重点学科实验室, 陕西 西安 710071
张玉明:西安电子科技大学 宽带隙半导体技术国家重点学科实验室, 陕西 西安 710071

联系人作者:吕红亮(hllv@mail.xidian.edu.cn)

备注:ZHANG Jing (1988-), female, Shaanxi, China, Ph.D. candidate. Research area involves Semiconductor materials and devices. E-mail:zhangjing6048@126.com

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引用该论文

ZHANG Jing,LYU Hong-Liang,NI Hai-Qiao,NIU Zhi-Chuan,ZHANG Yi-Men,ZHANG Yu-Ming. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 679-682

张静,吕红亮,倪海桥,牛智川,张义门,张玉明. InAs/AlSb 异质结的Pd/Ti/Pt/Au 合金化欧姆接触[J]. 红外与毫米波学报, 2018, 37(6): 679-682

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