量子电子学报, 2018, 35 (6): 736, 网络出版: 2018-12-26   

温度对单层黑磷烯基态能量及带隙的影响

Effect of temperature on ground state energy and band bap of monolayer black phosphorene
作者单位
内蒙古民族大学物理与电子信息学院, 内蒙古 通辽 028000
摘要
黑磷烯与石墨烯相比具有直接带隙和较高的载流子迁移率,与硅烯相比具有较高的稳定性,这 些优越的物理性质使其在新型量子器件的设计中具有巨大的潜在应用价值。采用幺正变换和变分相结 合的方法,推导出极性基底上单层黑磷烯中极化子、空穴-声子相互作用体系的基态能量以及带隙的能量 公式,研究了温度对极化子、空穴与声子相互作用体系的能量和带隙的影响。对典型极性基底上黑磷烯的 数值计算结果表明:极化子(或空穴-声子体系)的能量及带隙均随温度升高或截断波矢的增大而增大,随 声子频率的增大而减小,这说明黑磷烯中极化子的能量及带隙与基底材料直接相关,且温度对其性质的影响不可忽略。
Abstract
Compared with graphene, black phosphorene has direct band gap and higher carrier mobility, and has higher stability compared with siliconene. These superior physical properties make it a great potential application value in the design of new quantum devices. By combining the unitary transformation with variational method, the ground-state energy formula of polaron and hole-phonon interaction system in monolayer black phosphorus on a polar substrate is deduced, and the band gap formula is obtained. The influence of temperature on the energy and band gap of polaron, hole and hole-phonon interaction system is investigated. Numerical calculation for black phosphorus on typical polar substrates shows that the energy and band gap of polaron (or hole-phonon system) increase with the increase of temperature or truncated wave vector, and decrease with the increase of phonon frequency, which indicates that the energy and band gap of polaron in black phosphene are directly related to the substrate material, and the influence of temperature on the properties of the substrate can’t be ignored.

赵翠兰, 王龙. 温度对单层黑磷烯基态能量及带隙的影响[J]. 量子电子学报, 2018, 35(6): 736. ZHAO Cuilan, WANG Long. Effect of temperature on ground state energy and band bap of monolayer black phosphorene[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 736.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!