以硫粉末和MoO3粉末作为原料, 通过化学气相沉积法制备出MoS2薄膜, 用光学显微镜、原子力显微镜、喇曼光谱以及X射线衍射谱对所制备的MoS2薄膜进行表征。结果表明: 制备得到的二维MoS2, 其晶体形貌为三角形, 尺寸约为60 μm, 薄膜厚度约为0.7 nm; 二维MoS2可以作为理想的表面增强喇曼散射衬底, 促进与有机小分子的电子转移, 因此两者的喇曼光谱强度均增强。在MoS2薄膜上沉积有机小分子pentacene制备出具有良好整流特性的有机-无机pentacene/MoS2异质结, 通过分析ln(I/V2)-1/V曲线, 发现该异质结存在Fowler-Nordheim 隧穿现象, logI-logV曲线显示当电压在0~1 V时, 电荷传导为欧姆导电, 当电压高于1 V时, 电荷传导由空间电荷限制电流机制主导.研究结果可为单层MoS2与有机小分子pentacene结合应用于光电领域提供基础.

Using sulfur powder and MoO3 powder as raw materials, the MoS2 film was synthesized by chemical vapor deposition method, and was characterized by optical microscopy, atomic force microscopy, raman spectroscopy and X-ray diffraction. Results show that the crystal morphology of the MoS2 is triangle with size of 60 μm and thickness of 0.7 nm; and as one kind of the ideal substrates for surface-enhanced Raman scattering, two-dimensional MoS2 can promote the charge transfer between the organic molecule and MoS2, so the Raman intensity of them are enhanced. The pentacene was adsorbed onto the MoS2 film by physical vapor deposition method, and the organic-inorganic pentacene/MoS2 heterojunction with ideal rectifier characteristic was prepared. Analysing the ln(I/V2)-1/V curve, it is seen that the Fowler-Nordheim tunnelling phenomenon occured through the heterojunction; logI-logV curve shows that charges transport controled by ohmic conduction at 0~1 V voltages zone, and space-charge-limited currents predominate at over 1 V voltages zone. The research of MoS2 single-layer film and pentacene film will be contributed to the optoelectronic field.