Frontiers of Optoelectronics, 2018, 11 (4): 400–406, 网络出版: 2019-01-10  

Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes
作者单位
1 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2 Sichuan Branch, China Unicom Network Communications Co., Ltd, Chengdu 610041, China
3 Wuhan Aroptics-Tech Co., LTD, Wuhan 430074, China
摘要
Abstract
Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50 ℃ to 100 ℃. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.

, , , , , , , , , , , , . Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Frontiers of Optoelectronics, 2018, 11(4): 400–406. Yanli ZHAO, Junjie TU, Jingjing XIANG, Ke WEN, Jing XU, Yang TIAN, Qiang LI, Yuchong TIAN, Runqi WANG, Wenyang LI, Mingwei GUO, Zhifeng LIU, Qi TANG. Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Frontiers of Optoelectronics, 2018, 11(4): 400–406.

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