利用有限元法对组合激光辐照单晶硅的温度及应力场进行了数值分析, 在组合激光与连续激光平均功率密度相同的前提条件下比较了组合激光和连续激光分别作用于单晶硅的损伤效果。计算结果表明, 组合激光与连续激光相比更有利于实现对单晶硅的热损伤; 组合激光作用下单晶硅内部的Von Mises应力、轴向应力和环向应力比在连续激光作用下要大, 组合激光对单晶硅的损伤比连续激光更强。

The numerical analysis was conducted on the temperature and stress fields of single crystal silicon irradiated by the combined laser by the finite element method. The damage effect of the single crystal silicon which was respectively irradiated by the combined laser and continuous laser was compared, which was under the condition that the average power density of combined laser was equal to the continuous laser. The results show that combined laser is more conducive to realize thermal damage of single crystal silicon than continuous laser. The Von Mises stress, axial stress and hoop stress in single crystal silicon is higher when the model is irradiated by the combined laser than when it is under continuous lasers. The combined laser damage in monocrystalline silicon is stronger than continuous laser.