本文研究了SiO2/Si、SiNX/Si、Al2O3/Si这三种具有不同介电常数(k)栅介质材料结构在1.7 MeV电子辐照前后的傅里叶红外光谱。随着辐照剂量的增大,三种结构的吸收峰强度均随之减小,其振动模式受到影响。电子辐照SiO2/Si结构后,振动吸收峰随着辐照剂量的增大,由Si-O-Si、Si-O键引起的伸缩振动吸收峰的位置向低波数移动。电子辐照SiNX/Si结构后,由Si-N键、Si-O键引起的伸缩振动吸收峰的位置向高波数移动。电子辐照Al2O3/Si结构后,由Al2O3的晶格振动,Al-O-Al键引起的伸缩振动吸收峰的位置向高波数移动。吸收峰的变化为电子辐照不同介质材料引入的缺陷提供了新的信息。

We reported an experimental study by the fourier transform infrared spectroscopy(FTIR) measurements focused on the effect of 1.7 MeV electron irradiation in three different high k gate structure(SiO2/Si structure,SiNx/Si structure and Al2O3/Si structure).This FTIR spectrum is found that the absorption peak intensities of all three materials decrease with the increase of irradiation dose.After the electron irradiation of SiO2/Si structure,the vibrational absorption peak shifts to the low wave number with the increase of irradiation dose and the stretching vibration absorption peak was caused by Si-O-Si and Si-O bonds.To the SiNx/Si structure,the position of the stretching vibration absorption peak caused by Si-N bond and Si-O bond shifted to high wave number.To the Al2O3/Si structure samples,the position of the stretching vibration absorption peak caused by Al-O-Al crystal lattice vibration and Al-O-Al bond shifts to a high wave number.The change of the absorption peak provides new information for the defects introduced by electronically irradiated different dielectric materials.