基于磁控溅射法制备用于OLED器件阳极的TiNx薄膜电极。研究了N2流量和溅射功率对TiNx薄膜电阻率和反射率的影响。采用四探针、光学光度计、SEM等测试手段对TiNx薄膜进行了表征。结果表明, TiNx薄膜电阻率为35.6μΩ·cm时性能最佳, 制作的OLED器件在5 V电压下亮度可到22 757 cd/m2。

TiNx thin films produced by sputtering were used as electrodes for OLED devices. The influences of flow of N2 and power of sputtering on resistivity and reflectivity of TiNx thin film were investigated by four-probe-method, optical photometer, and SEM. The results showed that TiNx thin film performed best at 35.6 μΩ·cm as electrodes for OLED devices, in which condition, the OLED device could reach 22 757 cd/m2 at 5 V.