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TiN薄膜制备方法、性能及其在OLED方面应用的研究

Effect of TiN Thin Film Process on Organic Light Emitting Diodes

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摘要

基于磁控溅射法制备用于OLED器件阳极的TiNx薄膜电极。研究了N2流量和溅射功率对TiNx薄膜电阻率和反射率的影响。采用四探针、光学光度计、SEM等测试手段对TiNx薄膜进行了表征。结果表明, TiNx薄膜电阻率为35.6μΩ·cm时性能最佳, 制作的OLED器件在5 V电压下亮度可到22 757 cd/m2。

Abstract

TiNx thin films produced by sputtering were used as electrodes for OLED devices. The influences of flow of N2 and power of sputtering on resistivity and reflectivity of TiNx thin film were investigated by four-probe-method, optical photometer, and SEM. The results showed that TiNx thin film performed best at 35.6 μΩ·cm as electrodes for OLED devices, in which condition, the OLED device could reach 22 757 cd/m2 at 5 V.

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中图分类号:TN27

DOI:10.19453/j.cnki.1005-488x.2018.03.008

所属栏目:研究与试制

基金项目:中国博士后科学基金资助项目(20080430096)

收稿日期:2017-12-23

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张 阳:中国电子科技集团公司第五十五研究所, 南京 210016国家平板显示工程技术研究中心, 南京 210016
吕军锋:西安北方光电股份有限公司, 西安 710043
杨建兵:中国电子科技集团公司第五十五研究所, 南京 210016国家平板显示工程技术研究中心, 南京 210016
吴远武:中国电子科技集团公司第五十五研究所, 南京 210016国家平板显示工程技术研究中心, 南京 210016
刘腾飞:中国电子科技集团公司第五十五研究所, 南京 210016国家平板显示工程技术研究中心, 南京 210016

联系人作者:张阳(081120175@163.com)

备注:张 阳(1990—), 男, 硕士研究生, 从事显示电极方面的研究。

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引用该论文

ZHANG Yang,LV JunFeng,YANG Jianbing,WU Yuanwu,LIU Tengfei. Effect of TiN Thin Film Process on Organic Light Emitting Diodes[J]. Optoelectronic Technology, 2018, 38(3): 190-194

张 阳,吕军锋,杨建兵,吴远武,刘腾飞. TiN薄膜制备方法、性能及其在OLED方面应用的研究[J]. 光电子技术, 2018, 38(3): 190-194

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