研究了离子束溅射(IBS)制备的Nb₂O₅、Ta₂O₅和SiO₂薄膜的光学特性、力学特性以及薄膜微结构,分析了辅助离子源电压对薄膜特性的影响,并将电子束蒸发、离子辅助沉积和IBS制备的薄膜进行了对比。研究结果表明,IBS制备的薄膜具有更好的光学特性和微结构,同时具有较大的压应力、硬度和杨氏模量;辅助离子源可以改善薄膜的光学特性,调节薄膜应力和减小薄膜表面粗糙度,但对硬度和杨氏模量的影响相对较小。在不同的辅助离子源电压下,IBS制备的Nb₂O₅应力为-152~-281 MPa, Ta₂O₅的应力为-299~-373 MPa,SiO₂的应力为-427~-577 MPa;在合适的工艺参数下,消光系数可小于10 ^-4;薄膜表面平整,均方根粗糙度小于0.2 nm。

The optical and mechanical properties and the microstructures of Nb2O5, Ta2O5 and SiO2 thin films prepared by the ion beam sputtering (IBS) method are studied. The effect of the assisted ion source voltage on the film properties is analyzed. The comparison among films prepared by the electron beam evaporation, ion beam assisted deposition and IBS is also conducted. The study results show that the films prepared by IBS possess better optical performance and microstructures, as well as higher compressive stress, hardness and Young modulus. The assisted ion source is beneficial to improving the optical performance, adjusting the film stress and reducing the surface roughness of thin films, however, it has relatively small influence on the hardness and the Young modulus. Under different assisted ion source voltages, the stress of prepared Nb2O5 by IBS is -152--281 MPa, that of Ta2O5 is -299--373 MPa and that of SiO2 is -427--577 MPa. Under proper process parameters, the extinction coefficient can be smaller than 10 -4 and the film surface is smooth with a root mean square roughness of smaller than 0.2 nm.