Chinese Optics Letters, 2019, 17 (2): 020002, Published Online: Feb. 14, 2019
High responsivity and near-infrared photodetector based on graphene/MoSe2 heterostructure
Abstract
Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/MoSe 2 heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to 1.3 × 10 4 A · W 1 at 550 nm. The electron–hole pairs are excited in a few-layered MoSe 2 and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the MoSe 2 , which creates a photogating effect.
Beiyun Liu, Congya You, Chen Zhao, Gaoliang Shen, Yawei Liu, Yufo Li, Hui Yan, Yongzhe Zhang. High responsivity and near-infrared photodetector based on graphene/MoSe2 heterostructure[J]. Chinese Optics Letters, 2019, 17(2): 020002.